神马文学网Micron, Sun take NAND endurance to one million cycles
来源：百度文库 编辑：神马文学网 时间：2024/04/28 17:26:28
Peter ClarkeEE Times Europe
(12/17/2008 9:02 H EST)
The technology delivers the highest write/erase cycling capability of any NAND technology available on the market, Micron claimed. Micron did not say how the technology had been improved.
"We expect this technology to revolutionize the enterprise storage hierarchy and be adopted by a wide range of transaction-intensive applications, including solid state drives and storage systems, disk caching, as well as networking and industrial applications," said Brian Shirley, vice president of Microns memory group, in a statement.
"Sun has worked closely with Micron on the design of this next-generation NAND technology to achieve this milestone and to ensure customers are able to leverage next-generation flash technology now and into the future," said Michael Cornwell, lead technologist for flash memory at Sun, in the same statement.
Micron is now sampling its so-called Enterprise NAND flash memory components in capacities up to 32-Gbits. Volume production is expected in the first quarter of 2009. Micron also plans to introduce both SLC and multi-level cell (MLC) enterprise versions on its industry-leading 34-nm NAND flash manufacturing process early next year.